Manuale d’uso / di manutenzione del prodotto M471B1G73AH0 del fabbricante Samsung
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- 1 - M471B1G73AH0 Rev . 1.0, Jul. 2010 SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMA TION AND SPECIFICA TIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur poses only . All info rmation discussed herein is provided on an "AS IS" basis, without warra nties of any kind.
- 2 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 Rev ision History Revision No. History Draft Date Remark Editor 1.0 - First Release Jul. 2010 - S.
- 3 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 Table Of Contents 204pin Unbuffered SODIMM based on 4Gb A-die 1. DDR3 Unbuffered SODIMM Ordering Information .......................................... ....................................... ....
- 4 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 1. DDR3 Unbuff ered SODIMM Order ing Inf ormation NOTE : 1. "##" - F8/H9 2. F8 - 1066Mbps 7-7-7 & H9 - 1333Mbp s 9-9-9 - DDR3-1333(9-9-9) is backward compatib le to DDR3-1066(7-7-7) 2.
- 5 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 4. x64 DIMM Pin Configurations (F ront side/B ack Side) NOTE : 1. NC = No Connect, NU = Not Used, R FU = Reserved Future Use 2. TEST(pin 125) is reserved for bus analysi s probes and is NC on normal memory modul es.
- 6 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 5. Pin Descr iption NOTE: * The V DD and V DDQ pins are tied commo n to a si ngle po wer-plane on these designs.
- 7 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 6. Input /Output F uncti onal Description Symbol Ty p e Function CK0-CK1 CK0 -CK1 Input The system clock inputs. All address and command lines are sampled on the cross point of the rising edg e of CK and falling edge of CK.
- 8 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 7. F uncti on Block Diagram: 7.1 8GB, 1Gx64 Module (Popu lated as 2 ranks of x8 DDR3 SDRAMs) V7 V8 V5 S1 RAS CAS WE CK1 CK1 CKE1 ODT1 A[0:N] /BA[.
- 9 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 8. Abso lute Maximum Ratings 8.1 Abso lute Maximum DC Ratings NOTE : 1. S tresses greater th an those listed under “A bsolute Maximum Rating s” may cause p ermanent damage to the d evice.
- 10 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 10. AC & DC Input Measurement Levels 10.1 AC & DC Logic Input Leve ls for Single-ended Signals [ T abl e 1 ] Single-ended AC & DC in put levels for Command and Address NOTE : 1. For input o nly pins except RESET , V REF = V REFCA (DC) 2.
- 11 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 10.2 V REF T olerances. The dc-tolerance limits and ac-noise limits for the reference voltages V REFCA and V REFDQ are illustrate in Figure 1. It shows a valid reference voltage V REF (t) as a function of time.
- 12 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 10.3 AC and DC Logic Input Levels f or Diff erential Signals 10.3.1 Diff erential Signa ls Definition Figure 2. Definition of dif ferential ac-swing and "time above ac leve l" tDV AC 10.
- 13 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 10.3.3 Single-ended Requirements for Differential Signals Each individual component of a differential signal (CK, DQS, CK , DQS ) has also to comply with cert ain requirements for single-ended signals.
- 14 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 10.3.4 Different ial Input Cross Poi nt Voltage T o guarantee t ight setup and hold time s as well as output skew para meters wit h respect to clock and strobe, each cross point vo ltage of differential input signals (CK, CK and DQS, DQS ) must meet the requir ements in below table.
- 15 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 11. AC & DC Output Measurement Levels 11.1 Single Ended AC and DC Output Lev els [ T abl e 7 ] Single Ended AC and DC out put levels NOTE : 1.
- 16 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 11.4 Diff erential Output Slew Rate With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between V OLdiff (AC) and V OH- diff (AC) for differential signals as shown in below .
- 17 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 12. DIMM IDD specification definition Symbol Description IDD0 Operating One Bank Active-Precharge Cur rent CKE: High; External clock: On; tCK, n.
- 18 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 NOTE : 1) Burst Length: BL8 fixed by MRS: set MR0 A[1, 0]=00B 2) Output Buf fer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01 B; R TT_Nom enab.
- 19 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 13. IDD SPEC T ab le M471B1G73AH0 : 8 GB (1Gx64) Module NOTE : 1. DIMM IDD SPEC is calculated with consid ering de-actived rank(IDLE) is IDD2N.
- 20 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 14. Input /Output Capacitance 14.1 2Rx8 2G B SODIMM Parameter Symbol M471B1G73AH0 Unit s NOTE DDR3-1066 DDR3-1333 Min Max Min Max Input/output c.
- 21 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 15. E lectric al Char acteristics and AC timing (0 ° C<T CASE ≤ 95 ° C, V DDQ = 1.5V ± 0.
- 22 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 [ T abl e 14 ] DDR3-1066 Speed Bins Speed DDR3-1066 Units NOTE CL-nRCD-nRP 7 - 7 - 7 Parameter Symbol min max Internal read command to first data tAA 13.125 20 ns ACT to internal read or write delay time tRCD 13.
- 23 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 [ T abl e 15 ] DDR3-1333 Speed Bins Speed DDR3-1333 Units NOTE CL-nRCD-nRP 9 -9 - 9 Parameter Symbol min max Internal read command to first data tAA 13.5 (13.125) 8 20 ns ACT to internal read or write delay time tRCD 13.
- 24 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 [ T abl e 16 ] DDR3-1600 Speed Bins Speed DDR3-1600 Units NOTE CL-nRCD-nRP 11-11 -11 Parameter Symbol min max Internal read command to first data tAA 13.75 (13.125) 8 20 ns ACT to internal read or write delay time tRCD 13.
- 25 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 15.3.1 Speed Bin T able Notes Absolute S pecification (T OPER ; V DDQ = V DD = 1.5V +/- 0.075 V); NOTE : 1. The CL setting and CWL setting result in tCK(A VG).MIN and tCK(A VG).MAX requ irements.
- 26 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 16. T iming P arameters by Speed Gr ade [ T abl e 17 ] Timing Parameters by Speed Bin Speed DDR3-80 0 DDR3-1066 DDR3-1333 DDR3 -1600 Units NOTE .
- 27 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 [ Table 17 ] Timing Parame ters by Speed Bin (Cont.) Speed DDR3-800 DDR3-1066 DDR 3-1333 DDR3-1600 Units NOTE Parameter Symbol MIN MAX MIN MAX M.
- 28 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 [ T abl e 17 ] Timing Parameters by Speed Bin (Cont.) Speed DDR3-800 DDR3-1066 DDR3-1 333 DDR3-1600 Units NOTE Parameter Symbol MIN MAX MIN MAX .
- 29 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 16.1 Jitter Notes Specific Note a Unit ’tCK(avg)’ represents the actual tCK(avg) of the input cl ock under operation. Unit ’nCK’ r epresents one clock cycle of the input clock, counting the actual clock edges .
- 30 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 16.2 T iming P arameter Not es 1. Actual val ue dependant upo n measuremen t level defini tions which are TBD. 2. Commands requ iring a locked DL L are: READ (and RAP) an d synchronous ODT co mmands.
- 31 - Unbuffered SODIMM datasheet DDR3 SDRAM Rev . 1.0 17. Physical Dimensions : 17.1 512Mx8 based 1Gx64 Module (2 Ranks) - M471B1G73AH0 The used device is 512M x8 DDR3 SDRAM, FBGA. DDR3 SDRAM Part NO : K4B4G0846A - HC** * NOTE : T olerances on all dimensions ±0.
Un punto importante, dopo l’acquisto del dispositivo (o anche prima di acquisto) è quello di leggere il manuale. Dobbiamo farlo per diversi motivi semplici:
Se non hai ancora comprato il Samsung M471B1G73AH0 è un buon momento per familiarizzare con i dati di base del prodotto. Prime consultare le pagine iniziali del manuale d’uso, che si trova al di sopra. Dovresti trovare lì i dati tecnici più importanti del Samsung M471B1G73AH0 - in questo modo è possibile verificare se l’apparecchio soddisfa le tue esigenze. Esplorando le pagine segenti del manuali d’uso Samsung M471B1G73AH0 imparerai tutte le caratteristiche del prodotto e le informazioni sul suo funzionamento. Le informazioni sul Samsung M471B1G73AH0 ti aiuteranno sicuramente a prendere una decisione relativa all’acquisto.
In una situazione in cui hai già il Samsung M471B1G73AH0, ma non hai ancora letto il manuale d’uso, dovresti farlo per le ragioni sopra descritte. Saprai quindi se hai correttamente usato le funzioni disponibili, e se hai commesso errori che possono ridurre la durata di vita del Samsung M471B1G73AH0.
Tuttavia, uno dei ruoli più importanti per l’utente svolti dal manuale d’uso è quello di aiutare a risolvere i problemi con il Samsung M471B1G73AH0. Quasi sempre, ci troverai Troubleshooting, cioè i guasti più frequenti e malfunzionamenti del dispositivo Samsung M471B1G73AH0 insieme con le istruzioni su come risolverli. Anche se non si riesci a risolvere il problema, il manuale d’uso ti mostrerà il percorso di ulteriori procedimenti – il contatto con il centro servizio clienti o il servizio più vicino.
