Manuale d’uso / di manutenzione del prodotto CY7C2563KV18 del fabbricante Cypress Semiconductor
Vai alla pagina of 29
72-Mbit QDR™-II+ SRAM 4-W ord Burst Architecture (2.5 Cycle Read Latency) with ODT PRELIMINARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1 709 • 408-943-2600 Document Number: 001-15887 Rev .
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 2 of 29 Logic Block Diagram (CY7C2561KV18) Logic Block Diagram (CY7C2576KV18) 2M x 8 Array CLK A (20:0) Gen. K K Control Logic Address Register D [7:0] Read Add.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 3 of 29 Logic Block Diagram (CY7C2563KV18) Logic Block Diagram (CY7C2565KV18) 1M x 18 Array CLK A (19:0) Gen. K K Control Logic Address Register D [17:0] Read Add.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 4 of 29 Pin Configuration The pin configuration for CY7C2561KV18, CY7C 2576 KV18, CY7C2563KV18, and CY7C2565KV18 follow . [2] 165-Ball FBGA (13 x 15 x 1.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 5 of 29 CY7C2563KV18 (4M x 18) 123456789 10 11 A CQ NC/144M A WPS BWS 1 K NC/288M RPS AA C Q.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 6 of 29 T able 2. Pin Definitions Pin Name IO Pin Descripti on D [x:0] Input- Synchronous Data Input Signals . Sampled on the rising edge of K and K clocks when valid write operations are active.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 7 of 29 K Input Clock Positive Input Clock Input . The rising edge of K is used to capture synchronous inputs to the device and to dri ve out data through Q [x:0] .
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 8 of 29 Functional Overview The CY7C2561KV18, CY7C257 6KV18, CY7C2563KV18, CY7C2565KV18 are synchronous pipelined Burst SRAMs equipped with a read port and a write p ort.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 9 of 29 Read access and write access must be scheduled such th at one transaction is initiated on any clock cycle. If both port s are selected on the same K clock rise, th e arbitration depends on the previous state of the SRAM.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 10 of 29 Application Example Figure 1 shows two QDR-II+ used in an application. Figure 1. Application Example T able 3. T ru th T abl e The truth table for CY7C2561KV18, CY7C2576KV 18, CY7C2563KV18, and CY7C2565KV18 follo ws.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 1 1 of 29 T able 4. Write Cycle Descriptions The write cycle description table for CY7C2561KV18 and CY7C2563KV18 fo llows.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 12 of 29 T able 6. Write Cycle Descriptions The write cycle description tabl e for CY7C2565KV18 follows.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 13 of 29 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA package.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 14 of 29 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister .
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 15 of 29 Figure 2. T AP Controller St ate Diagram The stat e diagram for the T AP controller follows.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 16 of 29 Figure 3. T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [14, 15, 16] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V olt age I OH = − 2.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 17 of 29 T AP AC Switching Characteristics Over the Operating Range [17, 18] Parameter Descr.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 18 of 29 T able 7. Identification Register Definitions Instruction Field Va l u e De scription CY7C2561KV18 CY7C2576KV18 CY7 C2563KV18 CY7C2565KV18 Revision Numb er (31:29) 000 000 000 000 V ersion number .
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 19 of 29 T able 10. Boundary Scan Ord er Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bum.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 20 of 29 Power Up Sequence in QDR-II+ SRAM QDR-II+ SRAMs must be powered up and initialized in a predefined manner to prevent unde fined operation s.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 21 of 29 Maximum Ratings Exceeding maximum ratin gs may impair the useful life of the device. These user guidelines are not teste d. S torage T emperature .
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 22 of 29 I SB1 Automatic Power down Current Max V DD , Both Ports Deselected, V IN ≥ V IH .
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 23 of 29 AC T est Loads and W aveforms 1.25V 0.25V R = 50 Ω 5p F INCLUDING JIG AND SCOPE ALL INPUT PULSES Device R L = 50 Ω Z 0 = 50 Ω V REF = 0.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 24 of 29 Switching Characteristics Over the Operating Range [24, 25] Cypress Parameter Conso.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 25 of 29 Switching W aveforms Read/Writ e/Deselect Sequence [32, 33, 34] Figure 6.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 26 of 29 Ordering Information The following table lists all possible speed, package and temperat ure range options supported fo r these devi ces.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 27 of 29 450 CY7C256 1KV18-450BZC 51-851 80 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 28 of 29 Package Diagram Figure 7. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø 0 .
Document Number: 001-15887 Rev . *E Revised April 24, 2009 Page 29 of 29 QDR RAMs an d Quad Dat a Rate RAMs co mprise a ne w family of products d eveloped by Cy press, IDT , NEC, Re nesas, and Sam sung. All pr oduct and co mpany names mentione d in this do cument are the tr ademark s of their re specti ve holders .
Un punto importante, dopo l’acquisto del dispositivo (o anche prima di acquisto) è quello di leggere il manuale. Dobbiamo farlo per diversi motivi semplici:
Se non hai ancora comprato il Cypress Semiconductor CY7C2563KV18 è un buon momento per familiarizzare con i dati di base del prodotto. Prime consultare le pagine iniziali del manuale d’uso, che si trova al di sopra. Dovresti trovare lì i dati tecnici più importanti del Cypress Semiconductor CY7C2563KV18 - in questo modo è possibile verificare se l’apparecchio soddisfa le tue esigenze. Esplorando le pagine segenti del manuali d’uso Cypress Semiconductor CY7C2563KV18 imparerai tutte le caratteristiche del prodotto e le informazioni sul suo funzionamento. Le informazioni sul Cypress Semiconductor CY7C2563KV18 ti aiuteranno sicuramente a prendere una decisione relativa all’acquisto.
In una situazione in cui hai già il Cypress Semiconductor CY7C2563KV18, ma non hai ancora letto il manuale d’uso, dovresti farlo per le ragioni sopra descritte. Saprai quindi se hai correttamente usato le funzioni disponibili, e se hai commesso errori che possono ridurre la durata di vita del Cypress Semiconductor CY7C2563KV18.
Tuttavia, uno dei ruoli più importanti per l’utente svolti dal manuale d’uso è quello di aiutare a risolvere i problemi con il Cypress Semiconductor CY7C2563KV18. Quasi sempre, ci troverai Troubleshooting, cioè i guasti più frequenti e malfunzionamenti del dispositivo Cypress Semiconductor CY7C2563KV18 insieme con le istruzioni su come risolverli. Anche se non si riesci a risolvere il problema, il manuale d’uso ti mostrerà il percorso di ulteriori procedimenti – il contatto con il centro servizio clienti o il servizio più vicino.
