Manuale d’uso / di manutenzione del prodotto CY7C1294DV18 del fabbricante Cypress
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9-Mbit QDR- II™ SRAM 2-W ord Burst Architecture CY7C1292DV18 CY7C1294DV18 Cypress Semiconductor Corpora tion • 198 Champion Cou rt • San Jose , CA 95134-1 709 • 408-943-2 600 Document #: 001-00350 Rev .
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 2 of 23 Logic Block Diagram (CY7C1292DV18) CLK A (17:0) Gen. K K Control Logic Address Register D [17:0] Read Add. Decode Read Data Reg. RPS WPS Q [17:0] Control Logic Address Register Reg.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 3 of 23 Pin Configurations CY7C1292DV18 (5 12K x 18) 23 4 5 6 7 1 A B C D E F G H J K L M N P R A CQ NC NC NC NC DOFF NC NC/144M NC/36M BW.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 4 of 23 Pin Definitions Pin Name I/O Pin Descrip tion D [x:0] Input- Synchronous Data input signals, sampled on the rising edge of K and K clocks d uring va lid write operations . CY7C1292DV18 - D [1 7:0] CY7C1294DV18 - D [3 5:0] WPS Input- Synchronous Write Port Select, active LOW .
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 5 of 23 Functional Overview The CY7C1292DV18 a nd CY7C1294DV1 8 are synchronou s pipelined Burst SRAMs equipp ed with both a Read port and a Write port. The Read port is dedicated to Read operations and the Write port is dedicated to Write operations.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 6 of 23 Byte Write Operations Byte Write operations are supported by the CY7C1292DV18. A Write operation is initiated as described in the Write Opera- tions section above. The bytes that are w ritten are determined by BWS 0 and BWS 1 , which are sampled with each 18-bit da ta word.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 7 of 23 Application Example [1] T ruth T able [2, 3, 4, 5, 6, 7] Operation K RPS WPS DQ DQ Write Cycle: Load address on the rising e dge of K clock; i nput write data on K and K rising edges.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 8 of 23 Write Cycl e Descriptions (CY7C1294DV18 ) [2, 8] BWS 0 BWS 1 BWS 2 BWS 3 KK Comments L L L L L-H - During the Data portion of a Write sequence, all four bytes (D [35:0] ) are written into the device.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 9 of 23 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial bo undary scan test access port (T AP) in the FBGA package. This part is fully compliant with IEEE S tandard #1 149.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 10 of 23 IDCODE The IDCODE instruction causes a ven dor-specific, 32-bit code to be loaded into the instruction re gister .
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 1 1 of 23 Note: 9. The 0/1 next to each state re present s the value at TMS at the rising edge of TCK.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 12 of 23 T AP Controller Block Diagram 0 0 1 2 . . 29 30 31 Boundary Scan Register Identification Register 0 1 2 .
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 13 of 23 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 14 of 23 Identification Register Definitions Instruction Field Va l u e Description CY7C1292DV18 CY7C1294DV18 Revision Number (31:29) 000 000 V ersion number . C y p r e s s D e v i c e I D ( 2 8 : 1 2 ) 1 101001 10100101 10 1 101001 10101001 10 D e f i n e s t h e t y p e o f S R A M .
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 15 of 23 Boundary Scan Order Bit # Bum p ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 27 1 1H 54 7B 81 3G 1 6P 28 10G 55 6B 82 2G 26 .
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 16 of 23 Power-Up Sequence in QDR-II SRAM [16] QDR-II SRAMs must be powered up and initialized in a predefined manner to prevent undefined opera tions.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 17 of 23 Maximum Ratings (Above which the useful life may be impaired.) S torage T emperature ............. .............. ...... –65°C to +150°C Ambient T emperature with Power Applied .
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 18 of 23 Note: 22. Unless otherwise noted, test conditions assume sign al transiti on time of 2V/ns, timing reference levels of 0.75V , Vr ef = 0.75V , RQ = 250 Ω , V DDQ = 1.5V , input pulse levels of 0.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 19 of 23 Switching Characteristics Over the Operating Range [22, 23] Cypress Parameter Consortium Parameter Descriptio n 250 MHz 200 MHz 16 7 MHz Unit Min.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 20 of 23 Switching W aveforms [27, 28, 29] Read/Write/Deselect Sequence Notes: 27. Q00 refers to outp ut from address A0. Q01 refers to output from t he next internal burst addr ess following A0, i.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 21 of 23 Ordering Information Not all of the spee d, package and temperature ranges are a vailable. Please c ontact your local sales representative or visit www .cyp ress.com for actual pr oducts offered.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 22 of 23 © Cypress Semi con duct or Cor po rati on , 20 06 . The information con t a in ed he re i n is su bject to change wit hou t n otice.
CY7C1292DV18 CY7C1294DV18 Document #: 001-00350 Rev . *A Page 23 of 23 Document History Page Document Title: CY7C1292DV18/CY7C1294DV18 9-Mbit QDR- II™ SRAM 2-Word Burst Architecture Document Number: 001-00350 REV .
Un punto importante, dopo l’acquisto del dispositivo (o anche prima di acquisto) è quello di leggere il manuale. Dobbiamo farlo per diversi motivi semplici:
Se non hai ancora comprato il Cypress CY7C1294DV18 è un buon momento per familiarizzare con i dati di base del prodotto. Prime consultare le pagine iniziali del manuale d’uso, che si trova al di sopra. Dovresti trovare lì i dati tecnici più importanti del Cypress CY7C1294DV18 - in questo modo è possibile verificare se l’apparecchio soddisfa le tue esigenze. Esplorando le pagine segenti del manuali d’uso Cypress CY7C1294DV18 imparerai tutte le caratteristiche del prodotto e le informazioni sul suo funzionamento. Le informazioni sul Cypress CY7C1294DV18 ti aiuteranno sicuramente a prendere una decisione relativa all’acquisto.
In una situazione in cui hai già il Cypress CY7C1294DV18, ma non hai ancora letto il manuale d’uso, dovresti farlo per le ragioni sopra descritte. Saprai quindi se hai correttamente usato le funzioni disponibili, e se hai commesso errori che possono ridurre la durata di vita del Cypress CY7C1294DV18.
Tuttavia, uno dei ruoli più importanti per l’utente svolti dal manuale d’uso è quello di aiutare a risolvere i problemi con il Cypress CY7C1294DV18. Quasi sempre, ci troverai Troubleshooting, cioè i guasti più frequenti e malfunzionamenti del dispositivo Cypress CY7C1294DV18 insieme con le istruzioni su come risolverli. Anche se non si riesci a risolvere il problema, il manuale d’uso ti mostrerà il percorso di ulteriori procedimenti – il contatto con il centro servizio clienti o il servizio più vicino.
