Manuale d’uso / di manutenzione del prodotto CY14B104N del fabbricante Cypress
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CY14B104L, CY14B104N 4 Mbit (512K x 8/256K x 16) nvSRAM Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 001-07102 Rev .
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 2 of 25 Pinout s Figure 1. Pin Diagram - 48 FBG A Figure 2. Pin Diag ram - 44 Pin TSOP II WE V CC A 11 A 10 V CAP A 6 A 0 A 3 CE NC NC DQ 0 A 4.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 3 of 25 Figure 3. Pin Diagram - 54 Pi n TSOP II (x16) Pin Definitions Pin Name IO T ype Description A 0 – A 18 Input Address Inputs Used to Select one of the 524,288 bytes of the nvSRAM for x8 Co nfiguration .
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 4 of 25 Device Operation The CY14B104L/CY1 4B104N nvSRAM is made up of two functional components paired in the same physical cell. They are an SRAM memory cell and a nonvola tile QuantumTrap cell.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 5 of 25 Hardware RECALL (Power Up) During power up or after any low power condition (V CC <V SWITCH ), an internal RECALL re quest is latched. When V CC again exceeds the sense voltage of V SWITCH , a RECALL cycle is automatically initiated and takes t HRECALL to complete.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 6 of 25 Preventing AutoStore The AutoS t ore function is disabled by initiating an AutoS tore disable sequence. A sequence of read ope rations is performed in a manner similar to the software STORE initiation.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 7 of 25 Maximum Ratin gs Exceeding maximum ratings may impair the useful life of the device. These user guid elines are not tested. S torage T emperature ................ ................. –65 ° C to +150 ° C Maximum Accumulated Storage T ime At 150 ° C Ambient T emperature .
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 8 of 25 AC T est Conditions Input Pulse Levels .... ............................ .................... 0V to 3V Input Rise and Fall T imes (10% - 90%).................... .... < 3 ns Input and Output T iming Reference Levels .
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 9 of 25 AC Switching Characteristics Parameters Descr iption 20 ns 25 ns 45 ns Unit Cypress Parameters Alt Parameters Min Max Min Ma x Min Max .
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 10 of 25 Figure 7. SRAM Rea d Cycle #2: CE and OE Controlle d [3, 14, 18] Figure 8. SRAM Write Cycle #1: WE Controlled [3, 17, 18, 19] $GGUHVV.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 1 1 of 25 Figure 9. SRAM Write Cycle #2: CE Controlled [3 , 17, 18, 19] Figure 10. SRAM Write Cycle #3: BHE and BLE Controlled [3, 17, 18, 19] .
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 12 of 25 AutoStore/Power Up RECALL Parameters Description CY14B104L/CY14B1 04N Unit Min Max t HRECALL [20] Power Up RECALL Duration 20 ms t STORE [21] ST ORE Cycle Duration 8 ms t DELA Y [22] Time Allowed to Complete SRAM Cycle 1 70 μ s V SWITCH Low V oltage Trigger Level 2.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 13 of 25 Sof tware Controlled STORE/RECALL Cycle In the following table, the so ftware c o ntrolled STORE/RECALL cycle p arameters are listed.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 14 of 25 Hardware STORE Cycle Parameters Description CY14 B104L/CY14B104N Unit Min Max t PHSB Hardware ST ORE Pulse Width 15 ns t HLBL Hardware ST ORE LOW to STORE Busy 500 ns Switching W aveforms Figure 14.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 15 of 25 T ruth T able For SRAM Operations HSB should remain HIGH for SRAM Operations. For x8 Configuration CE WE OE Inputs/Outputs [2 ] Mode P.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 16 of 25 Ordering Information Speed (ns) Ordering Code Package Diagram Package T ype Operating Range 20 CY14B104L-ZS20XCT 51-85087 44-pin TSOP .
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 17 of 25 45 CY14B104L-ZS45XCT 51-85087 44-pin TSOP II Commercial CY14B104L-ZS45XIT 51-85087 44-pin TSOP II Industrial CY14B104L-ZS45XI 51-85087.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 18 of 25 Part Numbering Nomenclature Option: T - T ape & Reel Blank - S td. S peed: 20 - 20 ns 25 - 25 ns Data Bus: L - x8 N - x16 Density: 104 - 4 Mb V oltage: B - 3.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 19 of 25 Package Diagrams Figure 16. 44-Pin TSOP II (51-85087) MAX MIN. DIMENSION IN MM (INCH) 11.938 (0.470) PLANE SEATING PIN 1 I.D. 44 1 18.517 (0.729) 0.800 BSC 0° -5° 0.400(0.016) 0.300 (0.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 20 of 25 Figure 17. 48 -Ball FBGA - 6 mm x 10 m m x 1.2 mm (51 -85128) Package Diagrams (continued) A 1 A1 CORNER 0.75 0.75 Ø0.30±0.05(48X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.21±0.05 1.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 21 of 25 Figure 18. 54-Pin TSOP II (51-85160) Package Diagrams (continued) 51-85160 -** [+] Feedback.
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 22 of 25 Document History Page Document Title: CY14B104L/CY14B104N 4 Mbit (512K x 8/256K x 16) nvSRAM Document Number: 001-07102 Rev .
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 23 of 25 *F 1889928 See ECN vsutmp8/AE- SA Added Footnotes 1, 2 and 3. Updated logi c block diagram Added 48-FBGA (X8) Pin Dia gram Changed 8Mb Address expansion Pin from Pin 43 to Pin 42 for 44-TSOP II (x8).
CY14B104L, CY14B104N Document #: 001-07102 Rev . *L Page 24 of 25 *J 2600941 1 1/04/08 GVCH/PYRS Removed 15 n s access speed Updated Logi c block diagra m Updated footnote 1 Added footnote 2 and 5 Pin.
Document #: 001-07102 Rev . *L Revised December 19, 2008 Page 25 of 25 AutoS tore and QuantumT rap are registered tradem arks of Cypress Semico nductor Corpora tion. All product s and company names mentio ned in this document are th e trad emarks of the ir resp ectiv e holders.
Un punto importante, dopo l’acquisto del dispositivo (o anche prima di acquisto) è quello di leggere il manuale. Dobbiamo farlo per diversi motivi semplici:
Se non hai ancora comprato il Cypress CY14B104N è un buon momento per familiarizzare con i dati di base del prodotto. Prime consultare le pagine iniziali del manuale d’uso, che si trova al di sopra. Dovresti trovare lì i dati tecnici più importanti del Cypress CY14B104N - in questo modo è possibile verificare se l’apparecchio soddisfa le tue esigenze. Esplorando le pagine segenti del manuali d’uso Cypress CY14B104N imparerai tutte le caratteristiche del prodotto e le informazioni sul suo funzionamento. Le informazioni sul Cypress CY14B104N ti aiuteranno sicuramente a prendere una decisione relativa all’acquisto.
In una situazione in cui hai già il Cypress CY14B104N, ma non hai ancora letto il manuale d’uso, dovresti farlo per le ragioni sopra descritte. Saprai quindi se hai correttamente usato le funzioni disponibili, e se hai commesso errori che possono ridurre la durata di vita del Cypress CY14B104N.
Tuttavia, uno dei ruoli più importanti per l’utente svolti dal manuale d’uso è quello di aiutare a risolvere i problemi con il Cypress CY14B104N. Quasi sempre, ci troverai Troubleshooting, cioè i guasti più frequenti e malfunzionamenti del dispositivo Cypress CY14B104N insieme con le istruzioni su come risolverli. Anche se non si riesci a risolvere il problema, il manuale d’uso ti mostrerà il percorso di ulteriori procedimenti – il contatto con il centro servizio clienti o il servizio più vicino.
